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  • PMXB40UNEZ

PMXB40UNEZ

NEXPERIA - PMXB40UNEZ - MOSFET-Transistor, n-Kanal, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMXB40UNEZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 652
  • Description: NEXPERIA - PMXB40UNEZ - MOSFET-Transistor, n-Kanal, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
Rise Time 21ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 12V
Drain-source On Resistance-Max 0.064Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 400mW Ta 8.33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 556pF @ 10V
See Relate Datesheet