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  • PMXB65ENEZ

PMXB65ENEZ

In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB65ENEZ


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMXB65ENEZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 743
  • Description: In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB65ENEZ (Kg)

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Details

Tags

Parameters
Pin Count 3
JESD-30 Code R-PDSO-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 400mW Ta 8.33W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 67m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.067Ohm
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 400μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet