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  • PMXB75UPEZ

PMXB75UPEZ

In a Pack of 50, 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB75UPEZ


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMXB75UPEZ
  • Package: 3-XDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 909
  • Description: In a Pack of 50, 3 P-Channel MOSFET, -2.9 A, -20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB75UPEZ (Kg)

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Details

Tags

Parameters
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 317mW Ta 8.33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Factory Lead Time 4 Weeks
Mount Surface Mount
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Drain to Source Voltage (Vdss) 20V
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Operating Temperature -55°C~150°C TJ
Continuous Drain Current (ID) 2.9A
Drain-source On Resistance-Max 0.085Ohm
Packaging Tape & Reel (TR)
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
See Relate Datesheet