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  • PMZ350UPEYL

PMZ350UPEYL

PMZ350UPE - 20 V, P-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMZ350UPEYL
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 696
  • Description: PMZ350UPE - 20 V, P-channel Trench MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 330mOhm
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta 3.125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 127pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1A
Drain Current-Max (Abs) (ID) 1A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet