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PMZ350XN,315

MOSFET N-CH 30V 1.87A SOT883


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMZ350XN,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 781
  • Description: MOSFET N-CH 30V 1.87A SOT883 (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 420MOhm
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 37pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.87A Tc
Gate Charge (Qg) (Max) @ Vgs 0.65nC @ 4.5V
Rise Time 9.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 1.87A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet