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  • PMZ390UN,315

PMZ390UN,315

NEXPERIA - PMZ390UN,315 - MOSFET Transistor, N Channel, 200 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMZ390UN,315
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 301
  • Description: NEXPERIA - PMZ390UN,315 - MOSFET Transistor, N Channel, 200 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV (Kg)

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Details

Tags

Parameters
Height 470μm
ECCN Code EAR99
Length 1.02mm
Resistance 460MOhm
Width 620μm
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Radiation Hardening No
REACH SVHC No SVHC
Peak Reflow Temperature (Cel) 260
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 8 Weeks
Rds On (Max) @ Id, Vgs 460m Ω @ 200mA, 4.5V
Contact Plating Tin
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 950mV @ 250μA
Package / Case SC-101, SOT-883
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 25V
Surface Mount YES
Current - Continuous Drain (Id) @ 25°C 1.78A Tc
Number of Pins 3
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Rise Time 7.5ns
Weight 453.59237mg
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Transistor Element Material SILICON
Vgs (Max) ±8V
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 4.5 ns
Packaging Tape & Reel (TR)
Turn-Off Delay Time 18 ns
Published 2007
Series TrenchMOS™
Continuous Drain Current (ID) 1.78A
Threshold Voltage 700mV
JESD-609 Code e3
Part Status Active
Gate to Source Voltage (Vgs) 8V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Dual Supply Voltage 30V
Number of Terminations 3
Drain to Source Breakdown Voltage 30V
See Relate Datesheet