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  • PMZ950UPEYL

PMZ950UPEYL

Single P-Channel 20 V 1.4 Ohm 2.1 nC SMT Trench MOSFET - DFN1006-3


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PMZ950UPEYL
  • Package: SC-101, SOT-883
  • Datasheet: PDF
  • Stock: 237
  • Description: Single P-Channel 20 V 1.4 Ohm 2.1 nC SMT Trench MOSFET - DFN1006-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 1.02Ohm
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code R-PBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta 2.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.5A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet