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PN2222ABU
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Turn-Off Delay Time | 250 ns |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 10nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 40 |
| Turn Off Time-Max (toff) | 285ns |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 179mg |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | MKT-ZA03DREV3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 500mA |
| Frequency | 300MHz |
| Base Part Number | PN2222 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Turn On Delay Time | 35 ns |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
See Relate Datesheet