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  • PSMN005-75P,127

PSMN005-75P,127

MOSFET N-CH 75V 75A TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN005-75P,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 518
  • Description: MOSFET N-CH 75V 75A TO220AB (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 73ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 74 ns
Factory Lead Time 12 Weeks
Turn-Off Delay Time 144 ns
Continuous Drain Current (ID) 75A
Contact Plating Tin
Gate to Source Voltage (Vgs) 20V
Mounting Type Through Hole
Max Dual Supply Voltage 75V
Package / Case TO-220-3
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 75V
Surface Mount NO
Pulsed Drain Current-Max (IDM) 400A
Number of Pins 3
Avalanche Energy Rating (Eas) 500 mJ
Transistor Element Material SILICON
Radiation Hardening No
RoHS Status ROHS3 Compliant
Operating Temperature -55°C~175°C TJ
Lead Free Lead Free
Packaging Tube
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 37 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet