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PSMN011-60MLX

MOSFET N-CH 60V LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN011-60MLX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 507
  • Description: MOSFET N-CH 60V LFPAK33 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Fall Time (Typ) 15.5 ns
Turn-Off Delay Time 27.7 ns
Continuous Drain Current (ID) 61A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 242A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 91W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 91W
Case Connection DRAIN
Turn On Delay Time 13.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2191pF @ 30V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 37.2nC @ 10V
Rise Time 20.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet