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  • PSMN011-60MSX

PSMN011-60MSX

MOSFET N-CH 60V LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN011-60MSX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 612
  • Description: MOSFET N-CH 60V LFPAK33 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 91W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 26 Weeks
Rds On (Max) @ Id, Vgs 11.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Contact Plating Tin
Input Capacitance (Ciss) (Max) @ Vds 1368pF @ 30V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 61A Tc
Package / Case SOT-1210, 8-LFPAK33
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Surface Mount YES
Rise Time 8.46ns
Number of Pins 8
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~175°C TJ
Fall Time (Typ) 9.18 ns
Turn-Off Delay Time 16.9 ns
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 61A
Published 2013
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Part Status Active
Pulsed Drain Current-Max (IDM) 232A
Avalanche Energy Rating (Eas) 50.6 mJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Radiation Hardening No
See Relate Datesheet