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  • PSMN013-100YSEX

PSMN013-100YSEX

MOSFET N-CH 100V LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN013-100YSEX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 285
  • Description: MOSFET N-CH 100V LFPAK (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 238W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3775pF @ 50V
Current - Continuous Drain (Id) @ 25°C 82A Tj
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 82A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 330A
Turn Off Time-Max (toff) 63ns
Turn On Time-Max (ton) 39ns
Diameter 12.7mm
Height 25.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Material Metal
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Color Black, Clear
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 238W Tc
See Relate Datesheet