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  • PSMN013-30MLC,115

PSMN013-30MLC,115

MOSFET N-CH 30V 39A LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN013-30MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 430
  • Description: MOSFET N-CH 30V 39A LFPAK33 (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.6m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 519pF @ 15V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 9.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 9.6 ns
Continuous Drain Current (ID) 39A
Factory Lead Time 26 Weeks
Gate to Source Voltage (Vgs) 1.95V
Max Dual Supply Voltage 30V
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.0169Ohm
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Drain to Source Breakdown Voltage 27V
Number of Pins 8
Pulsed Drain Current-Max (IDM) 157A
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 5.6 mJ
Operating Temperature -55°C~175°C TJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 7 ns
See Relate Datesheet