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PSMN013-30YLC,115

MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN013-30YLC,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 800
  • Description: MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 26W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.6m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 521pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code MO-235
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.0169Ohm
Pulsed Drain Current-Max (IDM) 130A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 7 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet