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PSMN027-100PS,127

PSMN027-100PS - N-channel 100V 26.8 m? standard level MOSFET in TO220.


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN027-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 402
  • Description: PSMN027-100PS - N-channel 100V 26.8 m? standard level MOSFET in TO220. (Kg)

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Details

Tags

Parameters
Rise Time 11.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 29.6 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0268Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 59 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 103W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 103W
Case Connection DRAIN
Turn On Delay Time 14.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1624pF @ 50V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
See Relate Datesheet