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  • PSMN030-150B,118

PSMN030-150B,118

MOSFET N-CH 150V 55.5A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN030-150B,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 570
  • Description: MOSFET N-CH 150V 55.5A D2PAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55.5A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 71ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 76 ns
Turn-Off Delay Time 97 ns
Continuous Drain Current (ID) 55.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain to Source Breakdown Voltage 150V
Input Capacitance 3.68nF
Drain to Source Resistance 30mOhm
Rds On Max 30 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet