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  • PSMN038-100YLX

PSMN038-100YLX

MOSFET N-CH 100V 30A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN038-100YLX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 903
  • Description: MOSFET N-CH 100V 30A LFPAK (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 4
Supplier Device Package LFPAK56, Power-SO8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 94.9W Tc
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1905pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 39.2nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.905nF
Drain to Source Resistance 37.5mOhm
Rds On Max 37.5 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet