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  • PSMN040-100MSEX

PSMN040-100MSEX

Mosfet Transistor, N Channel, 30 A, 100 V, 0.0294 Ohm, 10 V, 3.3 V Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN040-100MSEX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 944
  • Description: Mosfet Transistor, N Channel, 30 A, 100 V, 0.0294 Ohm, 10 V, 3.3 V Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 91W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 91W
Case Connection DRAIN
Turn On Delay Time 8.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36.6m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 50V
Current - Continuous Drain (Id) @ 25°C 30A Tj
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 14.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 18.7 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0366Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 54 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet