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  • PSMN069-100YS,115

PSMN069-100YS,115

In a Pack of 10, N-Channel MOSFET, 17 A, 100 V, 4-Pin SOT-669 Nexperia PSMN069-100YS, 115


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN069-100YS,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 426
  • Description: In a Pack of 10, N-Channel MOSFET, 17 A, 100 V, 4-Pin SOT-669 Nexperia PSMN069-100YS, 115 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Resistance 72.4MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72.4m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 90V
Pulsed Drain Current-Max (IDM) 68A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet