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PSMN075-100MSEX

PSMN075 Series 100 V 16.4 nC 65 W N-Channel Standard Level MOSFET - LFPAK-33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN075-100MSEX
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 584
  • Description: PSMN075 Series 100 V 16.4 nC 65 W N-Channel Standard Level MOSFET - LFPAK-33 (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 71m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 773pF @ 50V
Current - Continuous Drain (Id) @ 25°C 18A Tj
Gate Charge (Qg) (Max) @ Vgs 16.4nC @ 10V
Rise Time 5.8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.2 ns
Turn-Off Delay Time 12.4 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 74A
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet