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PSMN0R9-25YLDX
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 300A |
| JEDEC-95 Code | MO-235 |
| Drain-source On Resistance-Max | 0.0012Ohm |
| Pulsed Drain Current-Max (IDM) | 1614A |
| DS Breakdown Voltage-Min | 25V |
| Avalanche Energy Rating (Eas) | 3343 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-100, SOT-669 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 238W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 0.85m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6721pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 300A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 89.8nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
See Relate Datesheet