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  • PSMN1R6-30BL,118

PSMN1R6-30BL,118

MOSFET N-CH 30V 100A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN1R6-30BL,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 882
  • Description: MOSFET N-CH 30V 100A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance 12.493nF
Drain to Source Resistance 1.58mOhm
Rds On Max 1.9 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 306W Tc
Element Configuration Single
Power Dissipation 306W
Turn On Delay Time 104 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12493pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 212nC @ 10V
Rise Time 163ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 174 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
See Relate Datesheet