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  • PSMN2R0-30YLE,115

PSMN2R0-30YLE,115

Mosfet Transistor, N Channel, 100 A, 30 V, 1700 Ohm, 10 V, 1.7 V Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN2R0-30YLE,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 382
  • Description: Mosfet Transistor, N Channel, 100 A, 30 V, 1700 Ohm, 10 V, 1.7 V Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 272W
Case Connection DRAIN
Turn On Delay Time 32.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5217pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 55.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 29.5 ns
Turn-Off Delay Time 41.5 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0035Ohm
Avalanche Energy Rating (Eas) 370 mJ
Diameter 12.7mm
Height 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Material Metal
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Color Black
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Power Dissipation-Max 272W Tc
Element Configuration Single
See Relate Datesheet