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  • PSMN2R1-40PLQ

PSMN2R1-40PLQ

MOSFET N-CH 40V 150A TO-220


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN2R1-40PLQ
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 263
  • Description: MOSFET N-CH 40V 150A TO-220 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 293W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 293W
Case Connection DRAIN
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9584pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 87.8nC @ 5V
Rise Time 96ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 92 ns
Turn-Off Delay Time 151 ns
Continuous Drain Current (ID) 150A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 40V
RoHS Status ROHS3 Compliant
See Relate Datesheet