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PSMN2R7-30PL,127

MOSFET N-CH 30V TO220AB


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN2R7-30PL,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 144
  • Description: MOSFET N-CH 30V TO220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 2.7MOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 170W
Case Connection DRAIN
Turn On Delay Time 46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3954pF @ 12V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet