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PSMN2R8-25MLC,115
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Factory Lead Time | 26 Weeks |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2432pF @ 12.5V |
| Package / Case | SOT-1210, 8-LFPAK33 |
| Surface Mount | YES |
| Current - Continuous Drain (Id) @ 25°C | 70A Tc |
| Number of Pins | 8 |
| Gate Charge (Qg) (Max) @ Vgs | 37.7nC @ 10V |
| Transistor Element Material | SILICON |
| Rise Time | 24.6ns |
| Operating Temperature | -55°C~175°C TJ |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Vgs (Max) | ±20V |
| JESD-609 Code | e3 |
| Fall Time (Typ) | 13.1 ns |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Turn-Off Delay Time | 19.9 ns |
| Number of Terminations | 4 |
| Continuous Drain Current (ID) | 70A |
| Terminal Finish | Tin (Sn) |
| Gate to Source Voltage (Vgs) | 1.95V |
| Technology | MOSFET (Metal Oxide) |
| Max Dual Supply Voltage | 25V |
| Terminal Position | SINGLE |
| Drain-source On Resistance-Max | 0.00375Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Terminal Form | GULL WING |
| Pin Count | 8 |
| Pulsed Drain Current-Max (IDM) | 536A |
| Reference Standard | IEC-60134 |
| Avalanche Energy Rating (Eas) | 77 mJ |
| JESD-30 Code | R-PSSO-G4 |
| Radiation Hardening | No |
| Number of Elements | 1 |
| RoHS Status | ROHS3 Compliant |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 88W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 88W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16.4 ns |
See Relate Datesheet