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  • PSMN2R8-40PS,127

PSMN2R8-40PS,127

PSMN2R8-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN2R8-40PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 739
  • Description: PSMN2R8-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation-Max 211W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 211W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4491pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Rise Time 29ns
Factory Lead Time 12 Weeks
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Mounting Type Through Hole
Package / Case TO-220-3
Fall Time (Typ) 23 ns
Surface Mount NO
Turn-Off Delay Time 52 ns
Number of Pins 3
Continuous Drain Current (ID) 100A
Transistor Element Material SILICON
JEDEC-95 Code TO-220AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Max Dual Supply Voltage 40V
Part Status Active
Drain-source On Resistance-Max 0.0028Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 40V
Number of Terminations 3
Pulsed Drain Current-Max (IDM) 797A
ECCN Code EAR99
Avalanche Energy Rating (Eas) 407 mJ
Radiation Hardening No
Terminal Finish Tin (Sn)
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Pin Count 3
Number of Elements 1
See Relate Datesheet