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  • PSMN3R0-30MLC,115

PSMN3R0-30MLC,115

MOSFET N-channel MOSFET logic level LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN3R0-30MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 608
  • Description: MOSFET N-channel MOSFET logic level LFPAK33 (Kg)

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Details

Tags

Parameters
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.15m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 34.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.00405Ohm
Pulsed Drain Current-Max (IDM) 498A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 64 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
See Relate Datesheet