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PSMN3R2-30YLC,115

MOSFET N-CH 30V 100A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN3R2-30YLC,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 632
  • Description: MOSFET N-CH 30V 100A LFPAK (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 92W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 92W
Case Connection DRAIN
Turn On Delay Time 19.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2081pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 29.5nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 39 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet