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  • PSMN3R9-25MLC,115

PSMN3R9-25MLC,115

PSMN3R9-25MLC - N-channel 25 V 4.15 m? logic level MOSFET in LFPAK33 using NextPower Technology


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN3R9-25MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 584
  • Description: PSMN3R9-25MLC - N-channel 25 V 4.15 m? logic level MOSFET in LFPAK33 using NextPower Technology (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Number of Pins 8
Supplier Device Package LFPAK33
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 69W Tc
Power Dissipation 69W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1524pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Rise Time 23.2ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 15.6 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 1.95V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.524nF
Drain to Source Resistance 6.35mOhm
Rds On Max 4.15 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet