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PSMN4R3-80PS,127

PSMN4R3-80PS - N-channel 80 V, 4.3 m? standard level MOSFET in TO220


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN4R3-80PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 656
  • Description: PSMN4R3-80PS - N-channel 80 V, 4.3 m? standard level MOSFET in TO220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 306W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 306W
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8161pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 676 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet