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PSMN4R4-30MLC,115

PSMN4R4-30MLC - N-channel 30 V 4.65 m? logic level MOSFET in LFPAK33 using NextPower Technology


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN4R4-30MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 817
  • Description: PSMN4R4-30MLC - N-channel 30 V 4.65 m? logic level MOSFET in LFPAK33 using NextPower Technology (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 12.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.65m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1515pF @ 15V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 23.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.2 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 2.15V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 363A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet