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  • PSMN5R6-100BS,118

PSMN5R6-100BS,118

MOSFET N-CH 100V 100A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN5R6-100BS,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 729
  • Description: MOSFET N-CH 100V 100A D2PAK (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 306W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 306W
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8061pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 12 Weeks
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 34 ns
Turn-Off Delay Time 83 ns
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Continuous Drain Current (ID) 100A
Surface Mount YES
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Number of Pins 3
Drain-source On Resistance-Max 0.0056Ohm
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 100V
Operating Temperature -55°C~175°C TJ
Avalanche Energy Rating (Eas) 468 mJ
Packaging Tape & Reel (TR)
Radiation Hardening No
Published 2012
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Part Status Active
See Relate Datesheet