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PSMN5R6-60YLX

PSMN5R6-60YL - N-channel 60 V, 5.6 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN5R6-60YLX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 992
  • Description: PSMN5R6-60YL - N-channel 60 V, 5.6 mO logic level MOSFET in LFPAK56 (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5026pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 66.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 405A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 88.2 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
See Relate Datesheet