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  • PSMN6R0-30YL,115

PSMN6R0-30YL,115

MOSFET N-CH 30V 79A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN6R0-30YL,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 666
  • Description: MOSFET N-CH 30V 79A LFPAK (Kg)

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Details

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Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 55W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 12V
Current - Continuous Drain (Id) @ 25°C 79A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 79A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Factory Lead Time 12 Weeks
Drain Current-Max (Abs) (ID) 73A
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.0097Ohm
Package / Case SC-100, SOT-669
Drain to Source Breakdown Voltage 30V
Surface Mount YES
Pulsed Drain Current-Max (IDM) 292A
Number of Pins 4
Avalanche Energy Rating (Eas) 26 mJ
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Radiation Hardening No
Published 2011
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
See Relate Datesheet