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PSMN6R0-30YLB,115

Mosfet Transistor, N Channel, 71 A, 30 V, 0.0055 Ohm, 10 V, 1.48 V Rohs Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN6R0-30YLB,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 827
  • Description: Mosfet Transistor, N Channel, 71 A, 30 V, 0.0055 Ohm, 10 V, 1.48 V Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1088pF @ 15V
Current - Continuous Drain (Id) @ 25°C 71A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 90mA
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 71A
Drain-source On Resistance-Max 0.0081Ohm
Pulsed Drain Current-Max (IDM) 283A
Avalanche Energy Rating (Eas) 13 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet