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  • PSMN6R1-30YLDX

PSMN6R1-30YLDX

PSMN6R1-30YLD - N-channel 30 V, 6.1 mO logic level MOSFET in LFPAK56 using NextPowerS3 Technology


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN6R1-30YLDX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 708
  • Description: PSMN6R1-30YLD - N-channel 30 V, 6.1 mO logic level MOSFET in LFPAK56 using NextPowerS3 Technology (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number PSMN6R1
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 47W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 817pF @ 15V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 13.6nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.2 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 66A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.00835Ohm
Pulsed Drain Current-Max (IDM) 263A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
See Relate Datesheet