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  • PSMN6R3-120PS

PSMN6R3-120PS

MOSFET N-CH 120V 70A TO-220


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN6R3-120PS
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 496
  • Description: MOSFET N-CH 120V 70A TO-220 (Kg)

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Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 405W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 405W
Case Connection DRAIN
Turn On Delay Time 42.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11384pF @ 60V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 207.1nC @ 10V
Rise Time 58.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 67.7 ns
Turn-Off Delay Time 142.1 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0067Ohm
Drain to Source Breakdown Voltage 120V
Pulsed Drain Current-Max (IDM) 280A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
See Relate Datesheet