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  • PSMN7R0-30MLC,115

PSMN7R0-30MLC,115

MOSFET N-CH 30V 67A LFPAK33


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN7R0-30MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 540
  • Description: MOSFET N-CH 30V 67A LFPAK33 (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
Turn On Delay Time 9.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1076pF @ 15V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 17.9nC @ 10V
Rise Time 15.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 67A
Gate to Source Voltage (Vgs) 2.15V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 270A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 57W Tc
See Relate Datesheet