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  • PSMN7R0-30YL,115

PSMN7R0-30YL,115

NEXPERIA - PSMN7R0-30YL,115 - MOSFET, N CHANNEL, 30V, 76A, 4-SOT-669


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN7R0-30YL,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 413
  • Description: NEXPERIA - PSMN7R0-30YL,115 - MOSFET, N CHANNEL, 30V, 76A, 4-SOT-669 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 4
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 7MOhm
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 51W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 51W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 12V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 39ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 76A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 65A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 260A
Max Junction Temperature (Tj) 175°C
Height 1.2mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet