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  • PSMN7R8-120PSQ

PSMN7R8-120PSQ

NEXPERIA - PSMN7R8-120PSQ - MOSFET Transistor, N Channel, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN7R8-120PSQ
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 731
  • Description: NEXPERIA - PSMN7R8-120PSQ - MOSFET Transistor, N Channel, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 349W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 45.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9473pF @ 60V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Rise Time 55.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60.8 ns
Turn-Off Delay Time 151.8 ns
Continuous Drain Current (ID) 70A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0079Ohm
Drain to Source Breakdown Voltage 120V
Pulsed Drain Current-Max (IDM) 280A
RoHS Status ROHS3 Compliant
See Relate Datesheet