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  • PSMN9R0-25MLC,115

PSMN9R0-25MLC,115

NEXPERIA - PSMN9R0-25MLC,115 - MOSFET-Transistor, n-Kanal, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN9R0-25MLC,115
  • Package: SOT-1210, 8-LFPAK33
  • Datasheet: PDF
  • Stock: 330
  • Description: NEXPERIA - PSMN9R0-25MLC,115 - MOSFET-Transistor, n-Kanal, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.1 ns
Turn-Off Delay Time 11.1 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Drain to Source Breakdown Voltage 25V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 7.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.65m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time 10.1ns
See Relate Datesheet