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PSMN9R5-100PS,127

PSMN9R5-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-PSMN9R5-100PS,127
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 959
  • Description: PSMN9R5-100PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 211W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 211W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4454pF @ 50V
Current - Continuous Drain (Id) @ 25°C 89A Tc
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 25.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22.8 ns
Turn-Off Delay Time 52.2 ns
Continuous Drain Current (ID) 89A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0096Ohm
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet