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PTFA041501HL V1

IC FET RF LDMOS 150W PG-64248-2


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-PTFA041501HL V1
  • Package: 2-Flatpack, Fin Leads, Flanged
  • Datasheet: PDF
  • Stock: 241
  • Description: IC FET RF LDMOS 150W PG-64248-2 (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Package / Case 2-Flatpack, Fin Leads, Flanged
Surface Mount YES
Transistor Element Material SILICON
Packaging Tray
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Current Rating (Amps) 1μA
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 470MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PTFA041501
Pin Count 2
JESD-30 Code R-PDFP-F2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 900mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 21dB
DS Breakdown Voltage-Min 65V
Power - Output 150W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status RoHS Compliant
See Relate Datesheet