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PZT651T1G

PZT651T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-PZT651T1G
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 851
  • Description: PZT651T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 800mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 75MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PZT651
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Case Connection COLLECTOR
Gain Bandwidth Product 75MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet