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QSB363ZR

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-QSB363ZR
  • Package: 2-SMD, Z-Bend
  • Datasheet: PDF
  • Stock: 907
  • Description: QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor (Kg)

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, Z-Bend
Number of Pins 2
Weight 90mg
Shape ROUND
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature DAY LIGHT FILTER
Subcategory Photo Transistors
Max Power Dissipation 75mW
Orientation Top View
Number of Functions 1
Operating Supply Voltage 5V
Polarity NPN
Configuration SINGLE
Number of Channels 1
Power Dissipation 75mW
Viewing Angle 24°
Output Power 75mW
Optoelectronic Device Type PHOTO TRANSISTOR
Lens Style Domed
Rise Time 15μs
Fall Time (Typ) 15 μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2mA
Wavelength - Peak 940 nm
Collector Emitter Breakdown Voltage 30V
Lens Color Black, Clear
Power Consumption 75mW
Max Breakdown Voltage 30V
Dark Current 100nA
Infrared Range YES
Light Current-Nom 1.5mA
Height 3mm
Length 2.7mm
Width 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet