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QSD123A4R0

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-QSD123A4R0
  • Package: Radial, 5mm Dia (T 1 3/4)
  • Datasheet: PDF
  • Stock: 751
  • Description: Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4 T/R (Kg)

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Details

Tags

Parameters
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 100mW
Viewing Angle 24°
Optoelectronic Device Type PHOTO TRANSISTOR
Size 5mm
Rise Time 7μs
Fall Time (Typ) 7 μs
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 16mA
Collector Emitter Breakdown Voltage 30V
Wavelength 880nm
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 30V
Dark Current 100nA
Infrared Range YES
Light Current-Nom 4mA
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case Radial, 5mm Dia (T 1 3/4)
Number of Pins 2
Weight 284mg
Shape ROUND
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Subcategory Photo Transistors
Max Power Dissipation 100mW
Orientation Top View
Number of Functions 1
See Relate Datesheet