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R6020KNZC8

MOSFET N-CHANNEL 600V 20A TO3PF


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-R6020KNZC8
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 265
  • Description: MOSFET N-CHANNEL 600V 20A TO3PF (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 196m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20A
Threshold Voltage 5V
Drain-source On Resistance-Max 0.196Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 418 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet