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R6025ANZC8

MOSFET N-CH 600V 25A TO3PF


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-R6025ANZC8
  • Package: TO-3P-3 Full Pack
  • Datasheet: -
  • Stock: 496
  • Description: MOSFET N-CH 600V 25A TO3PF (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 25A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 39 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet