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RE1C002UNTCL

MOSFET N-CH 20V 0.2A EMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RE1C002UNTCL
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 644
  • Description: MOSFET N-CH 20V 0.2A EMT3 (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 100mA, 2.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.2V 2.5V
Vgs (Max) ±8V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 850μm
See Relate Datesheet